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Progress in semiconductors II--electronic and optoelectronic applications : symposium held December 2-5, 2002, Boston, Massachusetts, U.S.A. / editors, B.D. Weaver [and others].

Title
Progress in semiconductors II--electronic and optoelectronic applications : symposium held December 2-5, 2002, Boston, Massachusetts, U.S.A. / editors, B.D. Weaver [and others].
Author
Symposium M, "Progress in Semiconductor Materials II: Electronic and Optoelectronic Applications" (2002 : Boston, Mass.)
Publication
Warrendale, Pa. : Materials Research Society, [2003], ©2003.

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Details

Additional Authors
  • Materials Research Society. Fall Meeting (2002 : Boston, Mass.)
  • Weaver, B. D.
Description
xvii, 680 pages : illustrations; 24 cm.
Series Statement
Materials Research Society symposium proceedings ; v. 744
Uniform Title
Materials Research Society symposia proceedings ; v. 744.
Alternative Title
  • Progress in semiconductors 2
  • Progress in semiconductors two
Subjects
Note
  • "Symposium M, 'Progress in Semiconductor Materials II: Electronic and Optoelectronic Applications,' was held December 2-5 at the 2002 MRS Fall Meeting in Boston"--Pref. (p. xvii).
Bibliography (note)
  • Includes bibliographical references and indexes.
Contents
  • Native Point Defect Interactions in ZGP Crystals under Influence of e-Beam Irradiation / A. I. Gribenyukov, G. A. Verozubova, A. Yu. Trofimov, A. W. Vere and C. J. Flynn -- Raman and Magneto Transport Studies of MBE Grown [beta][beta]FeSi[subscript 2], [beta][beta](Fe[subscript 1-x]Cr[subscript x])Si[subscript 2], and [beta][beta](Fe[subscript 1-x]Co[subscript x])Si[subscript 2] / A. Srujana, A. Wadhawan, K. Srikala, B. P. Gorman, R. J. Cottier, Wei Zhao, C. L. Littler, J. M. Perez, T. D. Golding, A. G. Birdwell, W. Henrion, M. Rebien, P. Stauss and R. Glosser -- Design and Fabrication of a VCSEL With Graded Bragg Mirror Interfaces for Operation at 850 nm / Chichang Zhang and Aris Christou -- High Gain, Low Threshold Current GaInAsP Based VCSELS for Operation at 1.24 um / Zhuopeng Tan, Yixin Li and Aris Christou -- Novel Resistance Reduction and Phase Changes of Contacts to n-Type InP by Rapid Thermal Annealing / J. S. Huang, T. Nguyen, N. Bar-Chaim, C. B. Vartuli, S. Anderson, J. Shearer and C. Fisher -- Design of a 364 nm Electrically Pumped Multi-Quantum Well Continuous Wave Nitride Vertical Cavity Surface Emitting Laser / Shelia C. Luke, Abhishek Motayed and Aris Christou -- DLTS Studies of Defects Produced in n-Type Silicon by Hydrogen Implantation at Low Temperature / Takahide Sugiyama, Masayasu Ishiko, Shigeki Kanazawa and Yutaka Tokuda -- Carrier Recombination in InAs/GaAs Quantum Dot and GaInNAs/GaAs Quantum Well LEDs Emitting Near 1300 nm / A. J. Bennett, L. Lofgren, P. N. Stavrinou, C. Roberts, R. Murray, G. Parry and J. S. Roberts -- Formation of Defects in MBE Re-Grown GaAs Films on GaAs/AlGaAs Heterostructures / M. Lamberti, V. Tokranov, R. Moore, M. Yakimov, A. Katsnelson and S. Oktyabrsky -- Interdiffusion in Semiconductor Quantum Dot Structures / P. Lever, L. Fu, C. Jagadish, M. Gal and H. H. Tan -- 1.5 [mu]m Range Self-Organized In[subscript 0.65]Ga[subscript 0.3]5As/In[subscript 0.52]Al[subscript 0.48]As Quantum Wire Structures Grown on (775)B-Oriented InP Substrates by Molecular Beam Epitaxy / K. Hyodo, Y. Ohno, H. Kanamori, T. Kitada, S. Shimomura and S. Hiyamizu -- Characterization of Metallic and Metal Oxide Nanoparticles Produced by Electrothermal-Chemical Synthesis / Kurt A. Schroder, Dennis E. Wilson, Kyoungjin Kim and Henry E. Elliott, Jr. -- Characterization of AlInAsSb and AlGaInAsSb MBE-Grown Digital Alloys / Leslie G. Vaughn, L. Ralph Dawson, Huifang Xu, Yingbing Jiang and Luke F. Lester -- Yellow-Green Emission for ETS-LEDs and Lasers Based on a Strained-InGaP Quantum Well Heterostructure Grown on a Transparent, Compositionally Graded AlInGaP Buffer / Lisa McGill, Juwell Wu and Eugene Fitzgerald -- Trace Water Detection in Phosphine by Cavity Ring-Down Spectroscopy / Susan Y. Lehman, Kris A. Bertness and Joseph T. Hodges -- Improved Device Performance of In[subscript 0.5]Ga[subscript 0.5]P/In[subscript 0.22]Ga[subscript 0.78]As/GaAs MOS p-HEMT Using a Selective Liquid Phase Oxidation / I.-H. Kang, J.-W. Lee, S.-J. Kang, S.-J. Jo, S.-K. In, H.-J. Song, J.-H. Kim and J.-I. Song -- Comparison of the Strain and Stress in Bonded and Epitaxial Gallium Arsenide on Silicon by Photoreflectance Spectroscopy Measurements / Spyros Gallis, George Deligeorgis, Alexandros Georgakilas and Marin Alexe -- Ti/Ni/Au/Diamond MIS Field Effect Transistors With TiO[subscript 2] Gate Dielectric / Yuhong Cai and Aris Christou -- Oxygen Incorporation into MBE Grown AlGaAs Layers / S. Naritsuka, O. Kobayashi, K. Mitsuda, T. Maruyama and T. Nishinaga -- Electronic Properties of n-type Al[subscript x]Ga[subscript 1-x]As Alloys / A. Ferreira da Silva, I. Pepe, H. Haratizadeh, P. O. Holtz, C. Persson, R. Ahuja, J. Souza de Almeida and A. G. de Oliveria -- Stability of Non-Hydrogenated and Hydrogenated P-Channel Polycrystalline Silicon Thin-Film Transistors / N. A. Hastas, C. A. Dimitriadis and G. Kamarinos -- Graded-Band-Gap Semiconductors: The Possibilities for Improvement of p-n Junction Performance / Bogdan Sokolovskii and Roman Yasnytskyi -- MOCVD Growth and Characterization of GaInNAs/GaAs/InGaAs/GaAs Quantum Well Structures / Abdel-Rahman A. El-Emawy, Hongjun Cao, Noppadon Nuntawong, Chiyu Liu and Marek Osinski -- Silicon CMOS BEOL Compatible Optical Waveguide Micro-Mirrors / Shom Ponoth, Navnit Agarwal, Peter Persans and Joel Plawsky -- Noise Sources in Polycrystalline Silicon Thin-Film Transistors / Il. Ki Han, Young Ju Park, Woon Jo Cho, Won Jun Choi, Jungil Lee, Alain Chovet and Jean Brini -- Changes in Structural and Optical Properties of CdS Thin Films During the Process of Chemical Bath Deposition / Wei Li, Liang-huan Feng, Ya-ping Cai, Jing-quan Zhang, Jia-gui Zheng, Wei Cai, Li-li Wu, Bing Li, Ye Shao, Dao-lin Cai and Wen-jian Len -- Development of an On-Chip Semiconducting Readout For Subsurface Optical Data / William K. Loghry, N. J. Ianno and R. O. Dillon -- 500[degrees]C Formation of Poly-Si[subscript 1-x]Ge[subscript x] (x[actual symbol not reproducible]0.5) on SiO[subscript 2] by Ion-Beam Stimulated Solid Phase Crystallization / Isao Tsunoda, Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh and Masanobu Miyao -- MOCVD Growth and Characterization of InNAs/GaAs Quantum Wells / Abdel-Rahman A. El-Emawy, Noppadon Nuntawong, Hongjun Cao, Chiyu Liu, Huifang Xu and Marek Osinski -- Photoluminescence in UHV/CVD Tensile-Strained Si Type-I: Quantum Wells on Bulk Crystal SiGe Substrates / S. R. Sheng, N. L. Rowell and S. P. McAlister -- Photoluminescence of Ge Nanoclusters in Ion Implanted SiO[subscript 2] / J. M. J. Lopes, F. C. Zawislak, M. Behar, P. F. P. Fichtner, L. Rebohle and W. Skorupa -- Optical Properties of Al[subscript 0.70]Ga[subscript 0.30]As:Er,Yb / Shin-ichiro Uekusa, Isao Tanaka and Tomoyuki Arai -- Photoreflectance Study of Hydrogenated (InGa)(AsN)/GaAs Heterostructures / M. Geddo, G. Guizzetti, R. Pezzuto, A. Polimeni, M. Capizzi, M. Bissiri, G. Baldassarri, Hoger von Hogersthal, D. Gollub and A. Forchel -- Optical and EPR Study of Defects in Cadmium Germanium Arsenide / Lihua Bai, N. Y. Garces, Nanying Yang, P. G. Schunemann, S. D. Setzler, T. M. Pollak, L. E. Halliburton and N. C. Giles -- Effect of Pressure-Enhanced Single Step Annealing on the Silicon Photoluminescence / S. Binetti, A. Le Donne, V. V. Emtsev, Jr., V. V. Emtsev and S. Pizzini -- Mesoscopic Study of the Electronic Properties of Thin Polymer Films / Ricardo M. Ribeiro, Marta M. D. Ramos, A. M. Almeida, Helena M. G. Correia, Jaime Silva and A. M. Stoneham -- Lanthanide Doped Cubic Boron Nitride / U. Vetter, T. Taniguchi, U. Wahl, J. Correia, A. Muller, C. Ronning, H. Hofsass and M. Dietrich / The ISOLDE Collaboration -- Growth and Characterization of Epitaxial Films of ZnGeP[subscript 2] / G. A. Verozubova, A. I. Gribenyukov, M. C. Ohmer, N. C. Fernelius and J. T. Goldstein -- Intersubband Transitions in InAs/AlSb Quantum Wells / J. Li, K. Kolokolov, C. Z. Ning, D. C. Larraber, G. A. Khodaparast, J. Kono, K. Ueda, Y. Nakajima, S. Sasa and M. Inoue -- Far Infrared Spectroscopy of In[subscript 0.53]Ga[subscript 0.47]As Quantum Wells on InP(100) / N. L. Rowell, D. J. Lockwood, P. J. Poole and G. Yu -- GaSb-Based Materials for Mid-Infrared Photodiodes Operating in the 0.9-2.55 [mu]m Spectral Range / I. A. Andreev, E. V. Kunitsyna, M. P. Mikhailova and Yu. P. Yakovlev -- Thermal Stability in HgCdTe IR Photodiodes / J. M. Dell, T. Nguyen, C. A. Musca, J. Antoszewski, L. Faraone and R. Pal -- Intersubband Transitions in In[subscript x]Ga[subscript 1-x]As/AlGaAs Multiple Quantum Wells for Long Wavelength Infrared Detection / Clayton L. Workman, Zhiming Wang, Wenquan Ma, Christi E. George, R. Panneer Selvam, Gregory J. Salamo, Qiaoying Zhou and M. Omar Manasreh -- Spectral Response Modification of Quantum Well Infrared Photodetector by Quantum Well Intermixing / J. C. Shin, W. J. Choi, I. K. Han, Y. J. Park, J. I. Lee, E. K. Kim, H. J. Kim and J. W. Choi --
  • Preparation of Optoelectronic Devices Based on AlN/AlGaN Superlattices / M. Holtz, G. Kipshidze, A. Chandolu, J. Yun, B. Borisov, V. Kuryatkov, K. Zhu, S. N. G. Chu, S. A. Nikishin and H. Temkin -- Dilute Group III-AsN: Bonding of Nitrogen in GaInAsN and AlGaAsN on GaAs and Realization of Long Wavelength (2.3 [mu]m) GaInAsN QWs on InP / D. Serries, T. Geppert, K. Kohler, P. Ganser and J. Wagner -- Low Temperature Photoluminescence Studies of Narrow Bandgap GaAsSbN Quantum Wells on GaAs / K. E. Waldrip, E. D. Jones, N. A. Modine, F. Jalali, J. F. Klem and G. M. Peake -- Interband Transitions in GaInNAs/GaAs Single Quantum Wells / M. O. Manasreh, D. J. Friedman, W. Q. Ma, C. L. Workman, C. E. George and G. J. Salamo -- Influence of Low-Energy Electron Beam Irradiation on Defects in Activated Mg-Doped GaN / O. Gelhausen, M. R. Phillips, H. N. Klein and E. M. Goldys -- Electrical Isolation of p-Type GaAsN Epitaxial Layers by Ion Irradiation / Q. Gao, J. Muller, P. N. K. Deenapanray, H. N. Tan and C. Jagadish -- The Compositional and Optical Characterizations of InGaAsN Alloy Semiconductor Grown by MOVPE / Sakuntam Sanorpim, Fumihiro Nakajima, Ryuji Katayama, Kentaro Onabe and Yashihiro Shiraki.
  • Materials Research Society Symposium Proceedings -- Control of Indium Surface Segregation in GaAs Layer on InGaP Grown by MOVPE / Y. Fukushima, Y. Nakano and Y. Shimogaki -- Lateral Epitaxial Overgrowth of InAs on (100) GaAs Substrates / Ganesan Suryanarayanan, Anish A. Khandekar, Brian E. Hawkins, Thomas F. Kuech and Susan E. Babcock -- Epitaxial Praseodymium Oxide: A New High-K Dielectric / H. J. Osten, E. Bugiel and A. Fissel -- Z-Contrast Imaging and EELS of Dislocation Cores at the Si/GaAs Interface / S. Lopatin, G. Duscher, S. J. Pennycook and M. F. Chisholm -- Fracture Mechanical Evaluation of GaAs Wafers / M. Schaper, M. Jurisch, F. Bergner and R. Hammer -- Phonon Frequencies and Thermal Expansion of III-V Compounds / Robert R. Reeber -- Terahertz-Emitting Silicon-Germanium Devices / Ralph T. Troeger, Thomas N. Adam, Samit K. Ray, Pengcheng Lv, Ulrike Lehmann and James Kolodzey -- New Ge-Sn Materials With Adjustable Bandgaps and Lattice Constants / Matthew R. Bauer, John Tolle, A. V. G. Chizmeshya, S. Zollner, J. Menendez and J. Kouvetakis -- Metal-Induced Low-Temperature Crystallization of Amorphous SiGe on Insulating Films / M. Miyao, H. Kanno, I. Tsunoda, T. Sadoh and A. Kenjo -- Process Control of Epi-Layers for SiGe:C Hetero-Structure Bipolar Transistors / Qianghua Xie, Erika Duda, Mike Kottke, Wentao Qin, Xiang-Dong Wang, Shifeng Lu, Martha Erickson and Heather B. Kretzschmar -- Raman Scattering Study for Self-Organized Ge Quantum Dots Formed on Si Substrate / T. R. Yang, M. M. Dvoynenko, Z. C. Feng, I. Ferguson and H. H. Cheng -- ZnO and ZnMgO Growth by Molecular Beam Epitaxy / Mitsuaki Yano, Ken-ichi Ogata, FengPing Yan, Kazuto Koike, Shigehiko Sasa and Masataka Inoue -- Luminescence and EPR Study of Lithium-Diffused ZnO Crystals / N. Y. Garces, Lijun Wang, M. M. Chirila, L. E. Halliburton and N. C. Giles -- MBE Growth and Optical Properties of ZnSeO / Y. Nabetani, T. Mukawa, Y. Ito, T. Kato and T. Matsumoto -- Implant Isolation of ZnO Epitaxial Layers / S. O. Kucheyev, C. Jagadish, J. S. Williams, P. N. K. Deenapanray, Mitsuaki Yano, Kazuto Koike, Shigehiko Sasa, Masataka Inoue and Ken-ichi Ogata -- Lattice Site Location Studies of Rare-Earths Implanted in ZnO Single-Crystals / Elisabete M. C. Rita, Ulrich Wahl, Armandina L. Lopes, Joao P. Araujo, Joao G. Correia, Edward Alves and Jose C. Soares / The ISOLDE Collaboration -- Effect of Remote Hydrogen Plasma Treatment on ZnO Single Crystal Surfaces / Yuri M. Strzhemechny, John Nemergut, Junjik Bae, David C. Look and Leonard J. Brillson -- Ultraviolet Emitting SrS:Te Thin Films / J. M. Fitz-Gerald, J. Hoekstra, J. D. Fowlkes and P. D. Rack -- Thermally Evaporated AgGaTe[subscript 2] Thin Films For Low-Cost p-AgGaTe[subscript 2]/n-Si Heterojunction Solar Cells / Krishna C. Mandal, Anton Smirnov, Utpal N. Roy and Arnold Burger -- Properties of GaAsSb QW Heterostructures Having Various Barrier Materials Grown by Metalorganic Chemical Vapor Deposition / Min Soo Noh, Jae Hyun Ryou, Ying-Lan Chang, Robert Weissman and Russell D. Dupuis -- High Efficiency Bulk Crystalline Silicon Light Emitting Diodes / Jianhua Zhao, Aihua Wang, Thorsten Trupke and Martin A. Green -- Extremely Large Er Excitation Cross Section in Er,O-Codoped GaAs Light Emitting Diodes Grown by Organometallic Vapor Phase Epitaxy / Yasufumi Fujiwara, Atsushi Koizumi, Kentaro Inoue, Akira Urakami, Taketoshi Yoshikane and Yoshikazu Takeda -- High-Resolution Study of Light and Heat Patterns in Infrared Emitting Devices / V. K. Malyutenko -- Electrical and Optical Properties of Zinc Oxide Thin Films and Heavily Aluminum-Doped Zinc Oxide Thin Films Prepared by Molecular Beam Epitaxy / Takeshi Ohgaki, Yuji Kawamura, Naoki Ohashi, Hirofumi Kakemoto, Satoshi Wada, Yutaka Adachi, Hajime Haneda and Takaaki Tsurumi -- Passivation of Defects in ZnO by Hydrogen Plasma Irradiation / Naoki Ohashi, Takamasa Ishigaki, Takashi Sekiguchi, Isao Sakaguchi and Hajime Haneda -- Structural, Optical and Electrical Properties of the Novel Semiconductor Alloy ZnO[subscript x]Te[subscript (1-x)] / H. L. Porter, C. Jin, J. Narayan, A. L. Cai, J. F. Muth and O. W. Holland -- The Growth and Characterization of Zinc Oxide Thin Film on Fused Silica and SiO[subscript 2]/Si(100) Substrates / C. Jin, A. Tiwari, H. Porter, M. Park and J. Narayan -- A Differential Scanning Calorimetry (DSC) Study on the Pyrolysis Mechanism of Zinc Oxide CVD Precursor, Zinc Acetylacetonate / Yuneng Chang, Junhsuan Hsieh, Chonan Wang and Liting Hong -- Pulsed Laser Deposition of Stable Cubic ZnO/MgO Multilayers / P. Bhattacharya, Rasmi R. Das and Ram S. Katiyar -- A Study on Impact of Process Parameters to Metal Organic Chemical Vapor Deposition Grown (002) Zinc Oxide Thin Films, at 320[degrees]C / Yuneng Chang, Hengchuan Lu, Yumeng Hung, Chunsung Lee, Jianming Chen and Yichang Jian -- Effect of Growth Temperature and Annealing on ZnO / A. L. Cai, J. F. Muth, M. J. Reed, H. L. Porter, C. Jin and J. Narayan -- Quantum Efficiency Modeling of Amorphous/Crystalline Silicon Heterojunction Photovoltaic Devices / F. Khalvati and S. Sivoththaman -- A Single Source Approach to Deposition of Nickel and Palladium Sulfide Thin Films by LP-MOCVD / J. Waters, P. O'Brien and J. H. Park -- Screen Printable Doped Self-Aligned Metallization for Solar Cells / Ernest A. Addo, Ismat Shah, Robert Opila, Allen M. Barnett, Kevin Allison and Oleg Sulima -- Photosensitive Amorphous Si Thin Films Prepared by Magnetron Technology / Galina Khlyap, Victor Brytan and Larisa Bochkariova -- Deposition of II/VI Thin Films from Novel Single-Source Precursors / Mohammad Afzaal, Mohammad Azad Malik, Paul O'Brien and Jin-Ho Park -- Amorphous-Microcrystalline Silicon Films Obtained Using Hydrogen Dilution in a DC Saddle-Field Glow-Discharge / T. Allen, I. Milostnaya, D. Yeghikyan, F. Gaspari, N. P. Kherani, T. Kosteski and S. Zukotynski -- The Role of Hydrogen in Laser Crystallized Polycrystalline Silicon / N. H. Nickel and K. Brendel -- The Energy Band Structures of Cd[subscript 1-x]Zn[subscript x]Te Polycrystalline Thin Films and Their Applications for Photovoltaic Devices / Jiagui Zheng, Lianghuan Feng, Ye Shao, Yaping Cai, Jingquan Zhang, Wei Cai, Lili Wu, Daolin Cai, Wenjian Len and Jumu Zhu -- Tunnel Currents in the Photo-Field Detectors and the Auger Transistor under Strong Electric Field / Vladimir D. Kalganov, Nina V. Mileshkina, Elena V. Ostroumova and Ekaterina A. Rogacheva -- A Boron Doped Amorphous Silicon Thin-Film Bolometer for Long Wavelength Detection / A. Heredia-J., A. Torres-J., A. Jaramillo-N., F. J. De la Hidalga-W. and M. Landa-V. -- Characterization of Sputter Deposited PbTe on Si (111) for Optoelectronic Applications / Alexey Jdanov, Zinovi Dashevsky, Joshua Pelleg and Roni Shneck -- Far-Infrared Magnetooptical Generalized Ellipsometry Determination of Free-Carrier Parameters in Semiconductor Thin Film Structures / Tino Hofmann, Marius Grundmann, Craig M. Herzinger, Mathias Schubert and Wolfgang Grill -- Far-Infrared Dielectric Function and Phonon Modes of Spontaneously Ordered (Al[subscript x]Ga[subscript 1-x])[subscript 0.52]In[subscript 0.48]P / Tino Hofmann, Volker Gottschalch and Mathias Schubert -- Electrodeposition of Cu[subscript 2]Se Thin Films by Electrochemical Atomic Layer Epitaxy (EC-ALE) / Raman Vaidyanathan, Mkhulu K. Mathe, Patrick Sprinkle, Steve M. Cox, Uwe Happek and John L. Stickney -- Optical Absorption of Large Band-Gap Sb[subscript x]Bi[subscript 1-x]I[subscript 3] Alloys / C. Persson, R. Ahuja, J. Souza de Almeida, B. Johansson, C. Y. An, F. A. Ferreira, N. Souza Dantas, I. Pepe and A. Ferreira da Silva -- Intersubband Transitions in Proton Irradiated InGaAs/InAlAs Multiple Quantum Wells Grown on Lattice Matched InP Substrate / Qiaoying Zhou, M. O. Manasreh, B. D. Weaver and M. Missous -- Composition of [beta][beta]FeSi[subscript 2] Thin-Films Grown by a Pulsed Laser Deposition Method / Shin-ichiro Uekusa, Masahiro Yamamoto, Keiichi Tsuchiya and Noboru Miura --
ISBN
1558996818
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