Research Catalog

Title

Advances in the understanding of crystal growth mechanisms / edited by T. Nishinaga [and others].

Publication

Amsterdam ; New York : Elsevier, 1997.

Items in the Library & Off-site

Details

Additional Authors

Nishinaga, T.

Description

ix, 600 pages : illustrations; 25 cm

Subject

• Crystal growth

Bibliography (note)

• Includes bibliographical references and index.

Contents

• Pt. I. Crystal Growth Theory and Simulations. Thermodynamic vs. kinetic critical nucleus and the reversible work of nucleus formation / K. Nishioka. The terrace-step-kink approach and the capillary-wave approach to fluctuation properties of vicinal surfaces / T. Yamamoto, N. Akutsu and Y. Akutsu. Fluctuation and morphological instability of steps in a surface diffusion field / M. Uwaha. Pattern formation of a crystal growing in a diffusion field / Y. Saito. Step structures of Si(III) vicinal surfaces / A. Natori. Step growth mechanism on (001) surfaces of diamond structure crystals / M. Tsuda and M. Hata. Monte Carlo simulation of MBE growth / T. Irisawa and Y. Arima. Crystal growth kinetics on stepped surface by the path probability method / K. Wada and H. Ohmi -- Pt. II. Growth Kinetics. Inter-surface diffusion of cation incorporation in MBE of GaAs and InAs / T. Nishinaga and X. Q. Shen.
• Study of surface chemical reactions in GaAs atomic layer epitaxy by in situ monitoring methods / A. Koukitu. Surface kinetics and mechanism of atomic layer epitaxy of GaAs using trimethylgallium / H. Ohno. Atomic ordering in epitaxial alloy semiconductors: from the discoveries to the physical understanding / H. Nakayama, T. Kita and T. Nishino. Monte Carlo simulation of microstructures in ordered III-V semiconductor alloys / N. Kuwano and K. Oki. Control of rotational twins on heterointerface of fluoride and semiconductors / K. Tsutsui, S. Ohmi and K. Kawasaki [et al.]. Growth of Ag crystallites on Mo(110) substrate observed by "in-situ" SEM / Y. Gotoh, A. Horii and H. Kawanowa [et al.]. Induction time of electrical nucleation in supercooled sodium acetate trihydrate aqeous solution / Y. Iba and T. Ohachi. Growth mechanism of smoke particles / C. Kaito, S. Kimura and Y. Saito -- Pt. III. Observations of Growth Surface and Interface.
• Thermally oxidized layers on Si-wafers - Surface X-ray scattering and field ion microscopy / J. Harada, I. Takahashi and T. Shimura [et al.]. Atom exchange process at the growth front in OMVPE revealed by X-ray CTR scattering measurement / Y. Takeda and M. Tabuchi. Surface structures during silicon growth on an Si(111) surface / A. Ichimiya, H. Nakahara and Y. Tanaka. REM studies of surfactant-mediated epitaxy / H. Minoda and K. Yagi. Oscillations of the intensity of scattered energetic ions from growing surface / K. Nakajima, Y. Fujii and K. Narumi [et al.]. Scanning tunneling microscopy study of solid phase epitaxy processes on the Si(001)-2x1 surface / T. Yao, T. Komura and K. Uesugi [et al.]. Crystal growth of polymers in thin films / K. Izumi, Gan Ping and M. Hashimoto [et al.]. Crystal growth and control of molecular orientation and polymorphism in physical vapor deposition of long-chain compounds / K. Sato, H. Takiguchi and S. Ueno [et al.].
• Polymer crystallization approached from a new view point of chain sliding diffusion / M. Hikosaka -- Pt. IV. Mechanisms of Heteroepitaxy. Initial growth layer, island formation, and critical thickness of InAs heteroepitaxy on GaAs substrate / A. Sasaki. Effects of buffer layers in heteroepitaxy of gallium nitride / K. Hiramatsu, T. Detchprohm and H. Amano [et al.]. Growth processes in the heteroepitaxy of Ge and Si[subscript 1-x]Ge[subscript x] on Si substrates using gas-source molecular beam epitaxy / Y. Yasuda, H. Ikeda and S. Zaima. Crystal growth mechanisms in III-V/Si heteroepitaxy / T. Soga and M. Umeno. Atomic layer epitaxy of GaAs, AlAs and GaN using GaCl[subscript 3] and AlCl[subscript 3] / F. Hasegawa. Surface diffusion processes of Ga and Al in MBE - formation of 10-nm scale GaAs ridge structures / T. Noda, S. Koshiba and Y. Nakamura [et al.]. Heteroepitaxy of cadmium telluride on sapphire / M. Kasuga, D. Kodama and H. Hagiwara [et al.].
• Formation of strain-free heteroepitaxial structures by annealing under ultrahigh pressure / H. Ishiwara and T. Hoshino -- Pt. V. Crystal Growth and Mechanism of Complex Systems. Growth mechanism of oxide superconductor crystals / H. Takei. An atomic level analysis of crystal growth mechanism in complex systems by means of nano-optical microscopy and AFM / H. Komatsu, S. Miyashita and T. Nakada [et al.]. A comprehensive treatise on crystal growth from aqueous solutions / T. Ogawa. Crystallization of sol-gel derived ferroelectric thin films with preferred orientation / S. Hirano, T. Yogo and W. Sakamoto. Anisotropy in microscopic structures of ice-water and ice-vapor interfaces and its relation to growth kinetics / Y. Furukawa and H. Nada. Growth of InGaSbBi bulk crystals on InSb seeds and rapid permeation of Ga into InSb during growth / M. Kumagawa and Y. Hayakawa.

ISBN

0444825045 (alk. paper)

LCCN

96051028

OCLC

ocm36103592

Owning Institutions

Columbia University Libraries